Browsing by Subject "Semiconductor quantum wells"
Now showing items 1-14 of 14
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Article
Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier
(2003)Electrical injection through a reverse biased Fe/AlGaAs Schottky contact was used to obtain electron-spin polarizations in a GaAs quantum well. The analysis of the transport data using the Rowell criteria shows that ...
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Conference Object
Electrical spin injection from a magnetic schottky tunnel contact into a semiconductor
(2002)A report on the electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor was presented. The temperature dependence of the optical polarization and corresponding spin injection efficiency was ...
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Article
Förster resonant energy transfer from an inorganic quantum well to a molecular material: Unexplored aspects, losses, and implications to applications
(2015)A systematic investigation of Förster resonant energy transfer (FRET) is reported within a hybrid prototype structure based on nitride single quantum well (SQW) donors and light emitting polymer acceptors. Self-consistent ...
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Article
Hybrid polaritons in strongly coupled microcavities: Experiments and models
(2004)We describe the fabrication of one-dimensional quantum microcavities containing two different layers of molecular J-aggregates. We show that strong coupling can occur between the confined cavity photon mode and the two ...
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Article
Influence of polarization field on the lasing properties of III-nitride quantum wells
(2006)A theoretical investigation of the effect of polarization-induced fields on the optoelectronic properties of a 3 nm In0.2Ga0.8N/GaN single quantum well has been carried out via a self-consistent solution of Schrödinger-Poisson ...
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Article
Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells
(2009)We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. ...
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Article
Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers
(2008)A theoretical investigation of Inx Ga1-x N/GaN single quantum well lasers with x in the range 0.05≤x≤0.3 is carried out via self-consistent Schrödinger-Poisson calculations in the effective mass approximation in order to ...
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Article
Investigation of spin-polarized resonant tunneling through double-barrier magnetic tunnel junctions by self-consistent solution of the Poisson-Schrödinger equations
(2003)The article discusses the investigation of spin-polarized resonant tunneling through double barrier magnetic tunnel junctions (DBMTJ) by the self-consistent solution of Poissons and Schrödingers equations using transfer ...
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Article
Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)
(1999)Persistent photoconductivity in 80 angstroms strained GaAs/In0.26Ga0.74As/GaAs quantum wells was investigated by measuring the Shubnikov de Haas and Hall effects at 4.2 K. The quantum wells were grown by molecular beam ...
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Article
New light from hybrid inorganic-organic emitters
(2008)We present the highlights of a research programme on hybrid inorganic-organic light emitters. These devices combine recent developments in III-V nitride technology (including UV emitting micro-arrays and specifically ...
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Article
Optical and electrical properties of selectively delta-doped strained InxGa1-xAs/GaAs quantum wells
(1996)We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the ...
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Article
Reduction of spin injection efficiency by interface defect spin scattering in ZnMnSe/AlGaAs-GaAs spin-polarized light-emitting diodes
(2002)The effects of the interface microstructure on spin-injection efficiency in Zn1-xMnxSe/AlyGa1-yAs-GaAs spin-polarized light-emitting diodes (spin-LEDs) were studied. It was shown that the quantum well (QW) spin polarization ...
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Conference Object
A schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor
(2003)A study was performed on a Schottky tunnel barrier contact for electrical spin injection from a magnetic metal into a semiconductor. It was reported that spin injection from a Fe Schottky contact produced a spin polarization ...
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Article
White light emission via cascade Förster energy transfer in (Ga, In)N quantum well/polymer blend hybrid structures
(2009)We have studied the room-temperature non-radiative energy transfer processes in hybrid structures composed of (Ga, In)N/GaN single quantum wells and semiconducting polymer blend films placed in nanometre-scale proximity. ...